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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSBC114EPDP6T5G

NSBC114EPDP6T5G

NSBC114EPDP6T5G
AMI Semiconductor / ON Semiconductor

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NSBC114EPDP6T5G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS NPN/PNP PREBIAS SOT963
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-963
Series -
Resistor - Emitter Base (R2) 10 kOhms
Resistor - Base (R1) 10 kOhms
Power - Max 339mW
Packaging Cut Tape (CT)
Package / Case SOT-963
Other Names NSBC114EPDP6T5GOSCT
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 2 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Base Part Number NSBC1*

MUN5311DW1, NSBC114EPXxx

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Reference Price(In US Dollars)

In stock:145
  • 1 pcs$0.452
  • 10 pcs$0.366
  • 100 pcs$0.195
  • 500 pcs$0.128
  • 1000 pcs$0.087

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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