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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSBA123JDXV6T1G

NSBA123JDXV6T1G

NSBA123JDXV6T1G
AMI Semiconductor / ON Semiconductor

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NSBA123JDXV6T1G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS 2PNP PREBIAS 0.5W SOT563
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-563
Series -
Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 2.2 kOhms
Power - Max 500mW
Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666
Other Names NSBA123JDXV6T1GOS
NSBA123JDXV6T1GOS-ND
NSBA123JDXV6T1GOSTR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Base Part Number NSBA1*

NSBA114EDXV6T1,5 Series

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