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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NJL4281DG

NJL4281DG

NJL4281DG
AMI Semiconductor / ON Semiconductor

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NJL4281DG

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS NPN 350V 15A TO264
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 350V
Vce Saturation (Max) @ Ib, Ic 1V @ 800mA, 8A
Transistor Type NPN + Diode (Isolated)
Supplier Device Package TO-264
Series -
Power - Max 230W
Packaging Tube
Package / Case TO-264-5
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 35MHz
Detailed Description Bipolar (BJT) Transistor NPN + Diode (Isolated) 350V 15A 35MHz 230W Through Hole TO-264
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5A, 5V
Current - Collector Cutoff (Max) 100µA
Current - Collector (Ic) (Max) 15A

NJL4281,4302D

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