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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > MUN5113DW1T1G

MUN5113DW1T1G

MUN5113DW1T1G
AMI Semiconductor / ON Semiconductor

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MUN5113DW1T1G

ManufacturerON Semiconductor
DescriptionTRANS 2PNP PREBIAS 0.25W SOT363
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 100mA
Voltage - Breakdown SC-88/SC70-6/SOT-363
Vce Saturation (Max) @ Ib, Ic 50V
Series -
RoHS Status Tape & Reel (TR)
Resistor - Emitter Base (R2) (Ohms) 47k
Resistor - Base (R1) (Ohms) -
Power - Max 250mW
Polarization 6-TSSOP, SC-88, SOT-363
Other Names MUN5113DW1T1G-ND
MUN5113DW1T1GOSTR
Noise Figure (dB Typ @ f) 47k
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 10 Weeks
Manufacturer Part Number MUN5113DW1T1G
Frequency - Transition 80 @ 5mA, 10V
Expanded Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Description TRANS 2PNP PREBIAS 0.25W SOT363
DC Current Gain (hFE) (Min) @ Ic, Vce 500nA
Current - Collector Cutoff (Max) 250mV @ 300µA, 10mA
Current - Collector (Ic) (Max) 2 PNP - Pre-Biased (Dual)

MUN5113DW1, NSBA144EDxx

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Reference Price(In US Dollars)

In stock:4145
  • 10 pcs$0.039
  • 100 pcs$0.032
  • 300 pcs$0.028
  • 3000 pcs$0.024
  • 6000 pcs$0.022
  • 9000 pcs$0.021

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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