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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > FJN3313RTA

FJN3313RTA

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FJN3313RTA

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS PREBIAS NPN 300MW TO92-3
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Transistor Type NPN - Pre-Biased
Supplier Device Package TO-92-3
Series -
Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 2.2 kOhms
Power - Max 300mW
Packaging Tape & Box (TB)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

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