FJN3313RTA
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FJN3313RTA
Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|
Description | TRANS PREBIAS NPN 300MW TO92-3 |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Transistor Type | NPN - Pre-Biased |
Supplier Device Package | TO-92-3 |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Power - Max | 300mW |
Packaging | Tape & Box (TB) |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 250MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 100mA |
RFQ |
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