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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGH20N6S2D

FGH20N6S2D

FGH20N6S2D
AMI Semiconductor / ON Semiconductor

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FGH20N6S2D

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionIGBT 600V 28A 125W TO247
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A
Test Condition 390V, 7A, 25 Ohm, 15V
Td (on/off) @ 25°C 7.7ns/87ns
Switching Energy 25µJ (on), 58µJ (off)
Supplier Device Package TO-247-3
Series -
Reverse Recovery Time (trr) 31ns
Power - Max 125W
Packaging Tube
Package / Case TO-247-3
Other Names FGH20N6S2D_NL
FGH20N6S2D_NL-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type -
Gate Charge 30nC
Detailed Description IGBT 600V 28A 125W Through Hole TO-247-3
Current - Collector Pulsed (Icm) 40A
Current - Collector (Ic) (Max) 28A

FG(H,P,B)20N6S2D

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