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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGB30N6S2DT

FGB30N6S2DT

FGB30N6S2DT
AMI Semiconductor / ON Semiconductor

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FGB30N6S2DT

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionIGBT 600V 45A 167W TO263AB
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A
Test Condition 390V, 12A, 10 Ohm, 15V
Td (on/off) @ 25°C 6ns/40ns
Switching Energy 55µJ (on), 100µJ (off)
Supplier Device Package TO-263AB
Series -
Reverse Recovery Time (trr) 46ns
Power - Max 167W
Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names FGB30N6S2DT_NL
FGB30N6S2DT_NL-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type -
Gate Charge 23nC
Detailed Description IGBT 600V 45A 167W Surface Mount TO-263AB
Current - Collector Pulsed (Icm) 108A
Current - Collector (Ic) (Max) 45A
Base Part Number FGB30N6

FG(H/P/B)30N6S2D

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