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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > FDMD8900

FDMD8900

FDMD8900
AMI Semiconductor / ON Semiconductor

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FDMD8900

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionMOSFET 2N-CH 30V POWER
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 12-Power3.3x5
Series -
Rds On (Max) @ Id, Vgs 4 mOhm @ 19A, 10V
Power - Max 2.1W
Packaging Tape & Reel (TR)
Package / Case 12-PowerWDFN
Other Names FDMD8900TR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 39 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2605pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Detailed Description Mosfet Array 2 N-Channel (Dual) 30V 19A, 17A 2.1W Surface Mount 12-Power3.3x5
Current - Continuous Drain (Id) @ 25°C 19A, 17A

FDMD8900

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Reference Price(In US Dollars)

In stock:15348
  • 1 pcs$2.37
  • 200 pcs$0.918
  • 500 pcs$0.886
  • 1000 pcs$0.87

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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