FDB3632_SB82115
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FDB3632_SB82115
| Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|
| Description | INTEGRATED CIRCUIT |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | D²PAK (TO-263AB) |
| Series | PowerTrench® |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 80A, 10V |
| Power Dissipation (Max) | 310W (Tc) |
| Packaging | Bulk |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 6000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Detailed Description | N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263AB) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 80A (Tc) |
| RFQ | |
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