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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N6052

2N6052

2N6052
AMI Semiconductor / ON Semiconductor

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2N6052

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS PNP DARL 100V 12A TO3
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 120mA, 12A
Transistor Type PNP - Darlington
Supplier Device Package TO-204 (TO-3)
Series -
Power - Max 150W
Packaging Tray
Package / Case TO-204AA, TO-3
Other Names 2N6052OS
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Frequency - Transition -
Detailed Description Bipolar (BJT) Transistor PNP - Darlington 100V 12A 150W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 6A, 3V
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 12A
Base Part Number 2N6052

2N6052 Power Transistors

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