TK16J60W,S1VQ
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TK16J60W,S1VQ
| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Description | MOSFET N CH 600V 15.8A TO-3P(N) |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 3.7V @ 790µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-3P(N) |
| Series | DTMOSIV |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.9A, 10V |
| Power Dissipation (Max) | 130W (Tc) |
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Other Names | TK16J60W,S1VQ(O TK16J60WS1VQ |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| FET Type | N-Channel |
| FET Feature | Super Junction |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Detailed Description | N-Channel 600V 15.8A (Ta) 130W (Tc) Through Hole TO-3P(N) |
| Current - Continuous Drain (Id) @ 25°C | 15.8A (Ta) |
| RFQ | |
Reference Price(In US Dollars)
- 1 pcs$6.074
- 25 pcs$4.884
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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