RN1105MFV,L3F
RN1105MFV,L3F
Manufacturer | Toshiba Semiconductor and Storage |
---|---|
Description | TRANS PREBIAS NPN 0.15W VESM |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Transistor Type | NPN - Pre-Biased |
Supplier Device Package | VESM |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Power - Max | 150mW |
Packaging | Cut Tape (CT) |
Package / Case | SOT-723 |
Other Names | RN1105MFV(TL3T)CT RN1105MFV(TL3T)CT-ND RN1105MFV,L3FCT |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
RFQ |
Reference Price(In US Dollars)
- 1 pcs$0.238
- 10 pcs$0.22
- 25 pcs$0.201
- 100 pcs$0.144
- 250 pcs$0.085
- 500 pcs$0.071
- 1000 pcs$0.048
- 2500 pcs$0.041
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of RN1105MFV,L3F
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