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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HN3C51F-GR(TE85L,F

HN3C51F-GR(TE85L,F

HN3C51F-GR(TE85L,F
Toshiba Semiconductor and Storage

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HN3C51F-GR(TE85L,F

ManufacturerToshiba Semiconductor and Storage
DescriptionTRANS 2NPN 120V 0.1A SM6
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Transistor Type 2 NPN (Dual)
Supplier Device Package SM6
Series -
Power - Max 300mW
Packaging Original-Reel®
Package / Case SC-74, SOT-457
Other Names HN3C51F-GR(TE85LF)DKR
HN3C51F-GR(TE85LF)DKR-ND
HN3C51F-GR(TE85LFDKR
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 100MHz
Detailed Description Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

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