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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HN2A01FU-GR(TE85LF

HN2A01FU-GR(TE85LF

HN2A01FU-GR(TE85LF
Toshiba Semiconductor and Storage

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HN2A01FU-GR(TE85LF

ManufacturerToshiba Semiconductor and Storage
DescriptionTRANS 2PNP 50V 0.15A US6-PLN
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Transistor Type 2 PNP (Dual)
Supplier Device Package US6
Series -
Power - Max 200mW
Packaging Cut Tape (CT)
Package / Case 6-TSSOP, SC-88, SOT-363
Other Names HN2A01FU-GR(TE85LF)CT
HN2A01FU-GR(TE85LF)CT-ND
HN2A01FU-GR(TE85LFCT
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 80MHz
Detailed Description Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 200mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 150mA

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