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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BDW83C-TO218

BDW83C-TO218

BDW83C-TO218
STMicroelectronics

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BDW83C-TO218

ManufacturerSTMicroelectronics
DescriptionTRANS NPN DARL 100V 15A TO-218
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 4V @ 150mA, 15A
Transistor Type NPN - Darlington
Supplier Device Package TO-218
Series -
Power - Max 130W
Packaging Tube
Package / Case TO-218-3, TO-218AC
Other Names BDW83CTO218
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition -
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 15A 130W Through Hole TO-218
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 6A, 3V
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 15A

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