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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > RJH65D27BDPQ-A0#T2

RJH65D27BDPQ-A0#T2

RJH65D27BDPQ-A0#T2
Renesas Electronics America

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RJH65D27BDPQ-A0#T2

ManufacturerRenesas Electronics America
DescriptionIGBT TRENCH 650V 100A TO247A
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 650V
Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 50A
Test Condition 400V, 50A, 10 Ohm, 15V
Td (on/off) @ 25°C 20ns/165ns
Switching Energy 1mJ (on), 1.5mJ (off)
Supplier Device Package TO-247A
Series -
Reverse Recovery Time (trr) 80ns
Power - Max 375W
Packaging Tube
Package / Case TO-247-3
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type Trench
Gate Charge 175nC
Detailed Description IGBT Trench 650V 100A 375W Through Hole TO-247A
Current - Collector (Ic) (Max) 100A

RJH65D27BDPQ-A0

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