NP109N04PUG-E1-AY
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NP109N04PUG-E1-AY
| Manufacturer | Renesas Electronics America |
|---|---|
| Description | MOSFET N-CH 40V 110A TO-263 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-263-3 |
| Series | - |
| Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 55A, 10V |
| Power Dissipation (Max) | 1.8W (Ta), 220W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 15750pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Detailed Description | N-Channel 40V 110A (Tc) 1.8W (Ta), 220W (Tc) Surface Mount TO-263-3 |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| RFQ | |
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