PDTB113ZS,126
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PDTB113ZS,126
| Manufacturer | NXP Semiconductors / Freescale |
|---|---|
| Description | TRANS PREBIAS PNP 500MW TO92-3 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Transistor Type | PNP - Pre-Biased |
| Supplier Device Package | TO-92-3 |
| Series | - |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Resistor - Base (R1) | 1 kOhms |
| Power - Max | 500mW |
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Other Names | 934059146126 PDTB113ZS AMO PDTB113ZS AMO-ND |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Current - Collector Cutoff (Max) | 500nA |
| Current - Collector (Ic) (Max) | 500mA |
| Base Part Number | PDTB113 |
| RFQ | |
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