BUK9E2R8-60E,127
BUK9E2R8-60E,127
Manufacturer | NXP Semiconductors / Freescale |
---|---|
Description | MOSFET N-CH 60V 120A I2PAK |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 2.1V @ 1mA |
Vgs (Max) | ±10V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | I2PAK |
Series | TrenchMOS™ |
Rds On (Max) @ Id, Vgs | 2.6 mOhm @ 25A, 10V |
Power Dissipation (Max) | 349W (Tc) |
Packaging | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Other Names | 568-9872-5 934066513127 BUK9E2R860E127 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 17450pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 5V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Drain to Source Voltage (Vdss) | 60V |
Detailed Description | N-Channel 60V 120A (Tc) 349W (Tc) Through Hole I2PAK |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
RFQ |
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