JAN1N5618US
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JAN1N5618US
| Manufacturer | Microsemi |
|---|---|
| Description | DIODE GEN PURP 600V 1A D5A |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 3A |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Supplier Device Package | D-5A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Series | Military, MIL-PRF-19500/429 |
| Reverse Recovery Time (trr) | 2µs |
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Other Names | 1086-2109 1086-2109-MIL |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Diode Type | Standard |
| Detailed Description | Diode Standard 600V 1A Surface Mount D-5A |
| Current - Reverse Leakage @ Vr | 500nA @ 600V |
| Current - Average Rectified (Io) | 1A |
| Capacitance @ Vr, F | - |
| RFQ | |
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