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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RCD075N19TL

RCD075N19TL

RCD075N19TL
LAPIS Semiconductor

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RCD075N19TL

ManufacturerLAPIS Semiconductor
DescriptionMOSFET N-CH 190V 7.5A CPT3
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 2.5V @ 1mA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package CPT3
Series -
Rds On (Max) @ Id, Vgs 336 mOhm @ 3.8A, 10V
Power Dissipation (Max) 850mW (Ta), 20W (Tc)
Packaging Cut Tape (CT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names RCD075N19TLCT
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Drain to Source Voltage (Vdss) 190V
Detailed Description N-Channel 190V 7.5A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)

RCD075N19

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Reference Price(In US Dollars)

In stock:26458
  • 1 pcs$1.418
  • 10 pcs$1.257
  • 100 pcs$0.994
  • 500 pcs$0.771
  • 1000 pcs$0.608

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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