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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > R6035KNZ1C9

R6035KNZ1C9

R6035KNZ1C9
LAPIS Semiconductor

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R6035KNZ1C9

ManufacturerLAPIS Semiconductor
DescriptionMOSFET N-CHANNEL 600V 35A TO247
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 5V @ 1mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247
Series -
Rds On (Max) @ Id, Vgs 102 mOhm @ 18.1A, 10V
Power Dissipation (Max) 379W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-247-3
Other Names R6035KNZ1C9TR
R6035KNZ1C9TR-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 17 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Detailed Description N-Channel 600V 35A (Tc) 379W (Tc) Through Hole TO-247
Current - Continuous Drain (Id) @ 25°C 35A (Tc)

R6035KNZ1

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Reference Price(In US Dollars)

In stock:8645
  • 1 pcs$6.917
  • 10 pcs$6.18
  • 100 pcs$5.067
  • 500 pcs$4.103
  • 1000 pcs$3.461

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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