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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > R6011KNJTL

R6011KNJTL

R6011KNJTL
LAPIS Semiconductor

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R6011KNJTL

ManufacturerLAPIS Semiconductor
DescriptionMOSFET N-CHANNEL 600V 11A TO263
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 5V @ 1mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-263
Series -
Rds On (Max) @ Id, Vgs 390 mOhm @ 3.8A, 10V
Power Dissipation (Max) 124W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names R6011KNJTLTR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 17 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
FET Type N-Channel
FET Feature Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Detailed Description N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-263
Current - Continuous Drain (Id) @ 25°C 11A (Tc)

R6011KNJ

LPTS TL Taping Spec

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Reference Price(In US Dollars)

In stock:14353
  • 1000 pcs$1.286

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