ES6U3T2CR
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ES6U3T2CR
| Manufacturer | LAPIS Semiconductor |
|---|---|
| Description | MOSFET N-CH 30V 1.4A WEMT6 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 6-WEMT |
| Series | - |
| Rds On (Max) @ Id, Vgs | 240 mOhm @ 1.4A, 10V |
| Power Dissipation (Max) | 700mW (Ta) |
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Other Names | ES6U3T2CRTR |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 5V |
| FET Type | N-Channel |
| FET Feature | Schottky Diode (Isolated) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | N-Channel 30V 1.4A (Ta) 700mW (Ta) Surface Mount 6-WEMT |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| RFQ | |
Reference Price(In US Dollars)
- 8000 pcs$0.266
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of ES6U3T2CR
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