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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTD123TSTP

DTD123TSTP

DTD123TSTP
LAPIS Semiconductor

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DTD123TSTP

ManufacturerLAPIS Semiconductor
DescriptionTRANS PREBIAS NPN 300MW SPT
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Transistor Type NPN - Pre-Biased
Supplier Device Package SPT
Series -
Resistor - Base (R1) 2.2 kOhms
Power - Max 300mW
Packaging Tape & Reel (TR)
Package / Case SC-72 Formed Leads
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 500mA 200MHz 300mW Through Hole SPT
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 5V
Current - Collector Cutoff (Max) 500nA (ICBO)
Current - Collector (Ic) (Max) 500mA
Base Part Number DTD123

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