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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPS110N12N3GBKMA1

IPS110N12N3GBKMA1

IPS110N12N3GBKMA1
International Rectifier (Infineon Technologies)

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IPS110N12N3GBKMA1

ManufacturerInternational Rectifier (Infineon Technologies)
DescriptionMOSFET N-CH 120V 75A TO251-3
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 4V @ 83µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO251-3
Series OptiMOS™
Rds On (Max) @ Id, Vgs 11 mOhm @ 75A, 10V
Power Dissipation (Max) 136W (Tc)
Packaging Tube
Package / Case TO-251-3 Stub Leads, IPak
Other Names IPS110N12N3 G
IPS110N12N3 G-ND
IPS110N12N3GBKMA1TR-ND
SP000674456
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 4310pF @ 60V
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 120V
Detailed Description N-Channel 120V 75A (Tc) 136W (Tc) Through Hole PG-TO251-3
Current - Continuous Drain (Id) @ 25°C 75A (Tc)

IPx110N12N3 G

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