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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > BCR112WE6327BTSA1

BCR112WE6327BTSA1

BCR112WE6327BTSA1
International Rectifier (Infineon Technologies)

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BCR112WE6327BTSA1

ManufacturerInternational Rectifier (Infineon Technologies)
DescriptionTRANS PREBIAS NPN 250MW SOT323-3
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Transistor Type NPN - Pre-Biased
Supplier Device Package PG-SOT323-3
Series -
Resistor - Emitter Base (R2) 4.7 kOhms
Resistor - Base (R1) 4.7 kOhms
Power - Max 250mW
Packaging Tape & Reel (TR)
Package / Case SC-70, SOT-323
Other Names BCR 112W E6327
BCR 112W E6327-ND
BCR112WE6327
BCR112WE6327BTSA1TR
BCR112WE6327XT
SP000010748
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 140MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 140MHz 250mW Surface Mount PG-SOT323-3
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA
Base Part Number BCR112

BCR112

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