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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > IXGT32N90B2D1

IXGT32N90B2D1

IXGT32N90B2D1
IXYS Corporation

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IXGT32N90B2D1

ManufacturerIXYS Corporation
DescriptionIGBT 900V 64A 300W TO268
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 900V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 32A
Test Condition 720V, 32A, 5 Ohm, 15V
Td (on/off) @ 25°C 20ns/260ns
Switching Energy 2.2mJ (off)
Supplier Device Package TO-268
Series HiPerFAST™
Reverse Recovery Time (trr) 190ns
Power - Max 300W
Packaging Tube
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type -
Gate Charge 89nC
Detailed Description IGBT 900V 64A 300W Surface Mount TO-268
Current - Collector Pulsed (Icm) 200A
Current - Collector (Ic) (Max) 64A
Base Part Number IXG*32N90

IXG(H,T)32N90B2D1

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In stock:776
  • 30 pcs$7.554

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