SIZ200DT-T1-GE3
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SIZ200DT-T1-GE3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET N-CH DUAL 30V |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-PowerPair® (3.3x3.3) |
| Series | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V |
| Power - Max | 4.3W (Ta), 33W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Other Names | SIZ200DT-T1-GE3TR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1510pF @ 15V, 1600pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V, 30nC @ 10V |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) 30V 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) 4.3W (Ta), 33W (Tc) Surface Mount 8-PowerPair® (3.3x3.3) |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 3000 pcs$0.556
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of SIZ200DT-T1-GE3
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