SIR850DP-T1-GE3
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SIR850DP-T1-GE3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET N-CH 25V 30A PPAK SO-8 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® SO-8 |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 20A, 10V |
| Power Dissipation (Max) | 4.8W (Ta), 41.7W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Other Names | SIR850DP-T1-GE3TR SIR850DPT1GE3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1120pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Detailed Description | N-Channel 25V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK® SO-8 |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 3000 pcs$0.599
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of SIR850DP-T1-GE3
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