SIHD2N80E-GE3
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SIHD2N80E-GE3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET N-CH 800V 2.8A DPAK |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | D-PAK (TO-252AA) |
| Series | E |
| Rds On (Max) @ Id, Vgs | 2.75 Ohm @ 1A, 10V |
| Power Dissipation (Max) | 62.5W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Other Names | SIHD2N80E-GE3TR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 315pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 19.6nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Detailed Description | N-Channel 800V 2.8A (Tc) 62.5W (Tc) Surface Mount D-PAK (TO-252AA) |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 1 pcs$0.935
- 10 pcs$0.784
- 30 pcs$0.702
- 75 pcs$0.608
- 525 pcs$0.566
- 975 pcs$0.548
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
Request Quote
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Introduce of SIHD2N80E-GE3
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