SIHB22N60E-GE3
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SIHB22N60E-GE3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET N-CH 600V 21A D2PAK |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | D2PAK |
| Series | - |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 11A, 10V |
| Power Dissipation (Max) | 227W (Tc) |
| Packaging | Tube |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Other Names | SIHB22N60EGE3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1920pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Detailed Description | N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount D2PAK |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 1 pcs$2.84
- 10 pcs$2.489
- 30 pcs$2.281
- 100 pcs$2.07
- 500 pcs$1.972
- 1000 pcs$1.929
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
Request Quote
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Introduce of SIHB22N60E-GE3
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