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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIA416DJ-T1-GE3

SIA416DJ-T1-GE3

SIA416DJ-T1-GE3
Electro-Films (EFI) / Vishay

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SIA416DJ-T1-GE3

ManufacturerElectro-Films (EFI) / Vishay
DescriptionMOSFET N-CH 100V 11.3A SC70-6L
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® SC-70-6 Single
Series TrenchFET®
Rds On (Max) @ Id, Vgs 83 mOhm @ 3.2A, 10V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Packaging Tape & Reel (TR)
Package / Case PowerPAK® SC-70-6
Other Names SIA416DJ-T1-GE3TR
SIA416DJT1GE3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 295pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 100V
Detailed Description N-Channel 100V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)

SIA416DJ

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Reference Price(In US Dollars)

In stock:145
  • 1 pcs$0.784
  • 10 pcs$0.659
  • 30 pcs$0.596
  • 100 pcs$0.534
  • 500 pcs$0.44
  • 1000 pcs$0.421

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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Introduce of SIA416DJ-T1-GE3

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