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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI8900EDB-T2-E1

SI8900EDB-T2-E1

SI8900EDB-T2-E1
Electro-Films (EFI) / Vishay

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SI8900EDB-T2-E1

ManufacturerElectro-Films (EFI) / Vishay
DescriptionMOSFET 2N-CH 20V 5.4A 10-MFP
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 1V @ 1.1mA
Supplier Device Package 10-Micro Foot™ CSP (2x5)
Series TrenchFET®
Rds On (Max) @ Id, Vgs -
Power - Max 1W
Packaging Tape & Reel (TR)
Package / Case 10-UFBGA, CSPBGA
Other Names SI8900EDB-T2-E1TR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 13 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs -
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Detailed Description Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.4A 1W Surface Mount 10-Micro Foot™ CSP (2x5)
Current - Continuous Drain (Id) @ 25°C 5.4A
Base Part Number SI8900

SI8900EDB

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In stock:9627
  • 3000 pcs$2.051

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