SI8823EDB-T2-E1
SI8823EDB-T2-E1
Manufacturer | Electro-Films (EFI) / Vishay |
---|---|
Description | MOSFET P-CH 20V 2.7A 4-MICROFOOT |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 4-MICRO FOOT® (0.8x0.8) |
Series | TrenchFET® Gen III |
Rds On (Max) @ Id, Vgs | 95 mOhm @ 1A, 4.5V |
Power Dissipation (Max) | 900mW (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | 4-XFBGA |
Other Names | SI8823EDB-T2-E1TR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 46 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | P-Channel 20V 2.7A (Tc) 900mW (Tc) Surface Mount 4-MICRO FOOT® (0.8x0.8) |
Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
RFQ |
Reference Price(In US Dollars)
- 3000 pcs$0.148
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of SI8823EDB-T2-E1
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