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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI8451DB-T2-E1

SI8451DB-T2-E1

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SI8451DB-T2-E1

ManufacturerElectro-Films (EFI) / Vishay
DescriptionMOSFET P-CH 20V 10.8A MICROFOOT
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package 6-Micro Foot™ (1.5x1)
Series TrenchFET®
Rds On (Max) @ Id, Vgs 80 mOhm @ 1A, 4.5V
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Packaging Tape & Reel (TR)
Package / Case 6-MICRO FOOT™
Other Names SI8451DB-T2-E1TR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Drain to Source Voltage (Vdss) 20V
Detailed Description P-Channel 20V 10.8A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
Current - Continuous Drain (Id) @ 25°C 10.8A (Tc)

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