SI8415DB-T1-E1
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SI8415DB-T1-E1
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET P-CH 12V 5.3A 2X2 4-MFP |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 4-Microfoot |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 37 mOhm @ 1A, 4.5V |
| Power Dissipation (Max) | 1.47W (Ta) |
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, CSPBGA |
| Other Names | SI8415DB-T1-E1TR SI8415DBT1E1 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Detailed Description | P-Channel 12V 5.3A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
| RFQ | |
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Introduce of SI8415DB-T1-E1
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