SI7911DN-T1-GE3
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SI7911DN-T1-GE3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET 2P-CH 20V 4.2A 1212-8 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 51 mOhm @ 5.7A, 4.5V |
| Power - Max | 1.3W |
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Other Names | SI7911DN-T1-GE3CT |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Detailed Description | Mosfet Array 2 P-Channel (Dual) 20V 4.2A 1.3W Surface Mount PowerPAK® 1212-8 Dual |
| Current - Continuous Drain (Id) @ 25°C | 4.2A |
| Base Part Number | SI7911 |
| RFQ | |
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Introduce of SI7911DN-T1-GE3
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