SI4459BDY-T1-GE3
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SI4459BDY-T1-GE3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET P-CHAN 30V SO-8 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Vgs (Max) | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-SO |
| Series | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs | 4.9 mOhm @ 15A, 10V |
| Power Dissipation (Max) | 3.1W (Ta), 5.6W (Tc) |
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Other Names | SI4459BDY-T1-GE3CT |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 32 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 3490pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 84nC @ 10V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | P-Channel 30V 20.5A (Ta), 27.8A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SO |
| Current - Continuous Drain (Id) @ 25°C | 20.5A (Ta), 27.8A (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 1 pcs$0.843
- 10 pcs$0.752
- 30 pcs$0.738
- 100 pcs$0.716
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of SI4459BDY-T1-GE3
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