SI3460DV-T1-E3
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SI3460DV-T1-E3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET N-CH 20V 5.1A 6TSOP |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 6-TSOP |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 5.1A, 4.5V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Packaging | Original-Reel® |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Other Names | SI3460DV-T1-E3DKR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Detailed Description | N-Channel 20V 5.1A (Ta) 1.1W (Ta) Surface Mount 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| RFQ | |
Reference Price(In US Dollars)
- 5 pcs$0.188
- 50 pcs$0.152
- 150 pcs$0.137
- 500 pcs$0.118
- 3000 pcs$0.109
- 6000 pcs$0.104
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
Request Quote
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Introduce of SI3460DV-T1-E3
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