DG636EN-T1-E4
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DG636EN-T1-E4
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | IC SWITCH DUAL SPDT 16-MINIQFN |
| Category | Integrated Circuits (ICs) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Supply, Single (V+) | 2.7 V ~ 12 V |
| Voltage - Supply, Dual (V±) | ±2.7 V ~ 5 V |
| Switch Time (Ton, Toff) (Max) | 60ns, 52ns |
| Switch Circuit | SPDT |
| Supplier Device Package | 16-miniQFN (1.8x2.6) |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Package / Case | 16-WFQFN |
| Other Names | DG636EN-T1-E4TR DG636ENT1E4 |
| Operating Temperature | -40°C ~ 125°C (TA) |
| On-State Resistance (Max) | 115 Ohm |
| Number of Circuits | 2 |
| Multiplexer/Demultiplexer Circuit | 2:1 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Detailed Description | 2 Circuit IC Switch 2:1 115 Ohm 16-miniQFN (1.8x2.6) |
| Current - Leakage (IS(off)) (Max) | 100pA |
| Crosstalk | -88dB @ 10MHz |
| Charge Injection | 0.1pC |
| Channel-to-Channel Matching (ΔRon) | 1 Ohm |
| Channel Capacitance (CS(off), CD(off)) | 2.1pF, 4.2pF |
| Base Part Number | DG636 |
| -3db Bandwidth | 610MHz |
| RFQ | |
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