EPC2110ENGRT
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EPC2110ENGRT
| Manufacturer | EPC |
|---|---|
| Description | TRANS GAN 2N-CH 120V BUMPED DIE |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA |
| Supplier Device Package | Die |
| Series | eGaN® |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 4A, 5V |
| Power - Max | - |
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Other Names | 917-EPC2110ENGRTR EPC2110ENGR |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 16 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
| FET Type | 2 N-Channel (Dual) Common Source |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 120V |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) Common Source 120V 3.4A Surface Mount Die |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| RFQ | |
Reference Price(In US Dollars)
- 2500 pcs$1.355
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of EPC2110ENGRT
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