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Home > Products > Integrated Circuits (ICs) > Memory > CYDD09S36V18-200BBXC

CYDD09S36V18-200BBXC

CYDD09S36V18-200BBXC
Cypress Semiconductor

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CYDD09S36V18-200BBXC

ManufacturerCypress Semiconductor
DescriptionIC SRAM 9M PARALLEL 256FBGA
CategoryIntegrated Circuits (ICs)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Write Cycle Time - Word, Page -
Voltage - Supply 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
Technology SRAM - Dual Port, Synchronous
Supplier Device Package 256-FBGA (17x17)
Series -
Packaging Tray
Package / Case 256-LBGA
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 5 (48 Hours)
Memory Type Volatile
Memory Size 9Mb (128K x 36 x 2)
Memory Interface Parallel
Memory Format SRAM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description SRAM - Dual Port, Synchronous Memory IC 9Mb (128K x 36 x 2) Parallel 200MHz 500ps 256-FBGA (17x17)
Clock Frequency 200MHz
Base Part Number CYDD
Access Time 500ps

FullFlex DDR Dual-Port SRAM

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