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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > 2SC3356-T1B-R25-A

2SC3356-T1B-R25-A

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2SC3356-T1B-R25-A

ManufacturerCEL (California Eastern Laboratories)
DescriptionSAME AS NE85633 NPN SILICON AMPL
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 12V
Transistor Type NPN
Supplier Device Package SOT-23-3
Series -
Power - Max 200mW
Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C (TJ)
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gain 11.5dB
Frequency - Transition 7GHz
Detailed Description RF Transistor NPN 12V 100mA 7GHz 200mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 10V
Current - Collector (Ic) (Max) 100mA

NE85633, 2SC3356

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