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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NVB25P06T4G

NVB25P06T4G

NVB25P06T4G
AMI Semiconductor / ON Semiconductor

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NVB25P06T4G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionMOSFET P-CH 60V 27.5A D2PAK
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±15V
Technology MOSFET (Metal Oxide)
Supplier Device Package D2PAK
Series -
Rds On (Max) @ Id, Vgs 82 mOhm @ 25A, 10V
Power Dissipation (Max) 120W (Tj)
Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names NVB25P06T4G-ND
NVB25P06T4GOSTR
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Detailed Description P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25°C 27.5A (Ta)

N(T,V)B25P06

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Reference Price(In US Dollars)

In stock:11030
  • 800 pcs$1.37

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