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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTMSD6N303R2G

NTMSD6N303R2G

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NTMSD6N303R2G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionMOSFET N-CH 30V 6A 8-SOIC
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC
Series FETKY™
Rds On (Max) @ Id, Vgs 32 mOhm @ 6A, 10V
Power Dissipation (Max) 2W (Ta)
Packaging Tape & Reel (TR)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names NTMSD6N303R2GOS
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 24V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
FET Type N-Channel
FET Feature Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 6A (Ta) 2W (Ta) Surface Mount 8-SOIC
Current - Continuous Drain (Id) @ 25°C 6A (Ta)

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