NTD4809NH-1G
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NTD4809NH-1G
| Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|
| Description | MOSFET N-CH 30V 9A IPAK |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | I-PAK |
| Series | - |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 30A, 10V |
| Power Dissipation (Max) | 1.3W (Ta), 52W (Tc) |
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 2155pF @ 12V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | N-Channel 30V 9.6A (Ta), 58A (Tc) 1.3W (Ta), 52W (Tc) Through Hole I-PAK |
| Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 58A (Tc) |
| RFQ | |
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