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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > NSV40301MDR2G

NSV40301MDR2G

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NSV40301MDR2G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS 2NPN 40V 3A 8SOIC
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 115mV @ 200mA, 2A
Transistor Type 2 NPN (Dual)
Supplier Device Package 8-SOIC
Series -
Power - Max 653mW
Packaging Tape & Reel (TR)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 26 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 100MHz
Detailed Description Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2A, 2V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 3A

NSS40301MDR2G

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In stock:27746
  • 2500 pcs$0.37

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