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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > NJX1675PDR2G

NJX1675PDR2G

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NJX1675PDR2G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS NPN/PNP 30V 3A 8SOIC
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 115mV @ 200mA, 2A, 170mV @ 200mA, 2A
Transistor Type NPN, PNP
Supplier Device Package 8-SOIC
Series -
Power - Max 2W
Packaging Tape & Reel (TR)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 100MHz, 120MHz
Detailed Description Bipolar (BJT) Transistor Array NPN, PNP 30V 3A 100MHz, 120MHz 2W Surface Mount 8-SOIC
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A, 2V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 3A

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