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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJW21191G

MJW21191G

MJW21191G
AMI Semiconductor / ON Semiconductor

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MJW21191G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS PNP 150V 8A TO-247
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 150V
Vce Saturation (Max) @ Ib, Ic 2V @ 1.6A, 8A
Transistor Type PNP
Supplier Device Package TO-247
Series -
Power - Max 125W
Packaging Tube
Package / Case TO-247-3
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 4MHz
Detailed Description Bipolar (BJT) Transistor PNP 150V 8A 4MHz 125W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 4A, 2V
Current - Collector Cutoff (Max) 10µA
Current - Collector (Ic) (Max) 8A

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